Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: THz and MIR
HL 35.5: Talk
Wednesday, March 20, 2024, 16:00–16:15, EW 203
Simulation and measurement of silicon resistivity characterization with terahertz TDS — •Joshua Hennig1,2, Jens Klier1, Stefan Duran1, Christian Röder3, Kuei-Shen Hsu4, Jan Beyer4, Nadine Schüler5, Georg von Freymann1,2, and Daniel Molter1 — 1Department of Materials Characterization and Testing, Fraunhofer ITWM, Kaiserslautern — 2Department of Physics and Research Center OPTIMAS, RPTU Kaiserslautern-Landau — 3Fraunhofer Institute for Integrated Systems and Device Technology IISB, Department Energy Materials and Test Devices, Erlangen — 4Institute of Applied Physics, Technische Universität Bergakademie Freiberg — 5Freiberg Instruments GmbH, Freiberg
Silicon is one of the most important semiconductors used in many applications that are essential to modern electronics. One of its main characteristics is the resistivity which is usually measured by the four-point probe method requiring to contact the sample with the measuring tip. This, however, always contains the danger of affecting the material under test. A fast and non-contact measurement technique is terahertz time-domain spectroscopy (TDS). This technique is already well established in the characterization of dielectrics, but its potential to characterize semiconductors is not fully utilized, yet. Therefore, this potential is investigated by simulations as well as measurements of single-layer silicon wafers as well as two-layer silicon samples with TDS. As will be shown, the resistivity characterization is possible over a wide range for single-layer samples, while it is more complicated and restricted to specific cases for two-layer samples.
Keywords: terahertz time-domain spectroscopy; resistivity; silicon; simulation; Drude model