Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.17: Poster

Wednesday, March 20, 2024, 18:00–20:30, Poster E

Optically gated acousto-electric effect in 2D semiconductors — •Felix Ehring, Benjamin Mayer, Clemens Strobl, Matthias Weiß, Hubert Krenner, Ursula Wurstbauer, and Emeline Nysten — Institute of Physics, University of Münster, Germany

With wavelengths in the micrometer range at GHz frequencies, surface acoustic waves (SAWs) are a versatile tool for radio frequency control and probing of charge carrier dynamics in novel semiconductor nanostructures. They are generated on a piezoelectric chip and routed over long distances to couple either mechanically or electrically with almost any nanosystems. In our experiments we fabricated hybrid lithium niobate SAW-devices including SAW delay lines with design frequencies of 150-250MHz containing gold electrodes on which different mechanically exfoliated transition metal dichalcogenide (TMDC) 2D materials can be placed. The dynamic electric field of the SAW induces a SAW power-dependent Acousto-Electric Current (AEC) in the different TMDC structures. The SAW directional dependence of this fundamental effect enables a detailed investigation of the TMDC interface.Through the spatially-resolved photodoping of the TMDC with a focused green laser (532nm), this setup can be utilized to study the charge carrier dynamics in a variety of different TMDCs, spanning from mono- to few-layer. [1] J. Phys. D:Appl. Phys. 52(35):353001 (2019)

Keywords: surface acoustic waves; acousto-electric effect