Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.22: Poster
Mittwoch, 20. März 2024, 18:00–20:30, Poster E
Substitutional Doping of Exfoliated 2D Materials — •Sirri Batuhan Kalkan1, Felix Junge2, Hans Hofsäss2, and Thomas Weitz1 — 1I. Institute of Physics, Georg-August Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen — 2II. Institute of Physics, Georg-August Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen
Low-energy (<50 eV) ion implantation is a versatile technique for creating novel two-dimensional electronic devices by doping with electrons, holes, or inducing magnetism [1-3]. These modified films can be utilized as electrodes in energy-efficient electrochemical processes, homojunctions of the same material, or unique spintronic devices. In this poster, we discuss the optimization of the implantation processes for mechanically exfoliated 2D materials. We cover several topics, including improvements through post-cleaning approaches, the influence of doping-induced defects, the fabrication of prototype van der Waals heterostructure devices, and their characterization.
References: [1] Willke, Philip, et al. "Doping of graphene by low-energy ion beam implantation: structural, electronic, and transport properties." Nano Letters 15.8 (2015): 5110-5115 [2] Lin, Pin-Cheng, et al. "Doping graphene with substitutional Mn." ACS nano 15.3 (2021): 5449-5458. [3] Pramanik, Arindam, et al. "Anomalies at the Dirac Point in Graphene and Its Hole-Doped Compositions." Physical Review Letters 128.16 (2022): 166401
Keywords: low-energy ion implantation; doping; graphene; transition metal dichalcogenides; magnetism