Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.23: Poster
Mittwoch, 20. März 2024, 18:00–20:30, Poster E
Wavelength-Dependent Optical Excitation and Depth-Resolved Photoluminescence Spectroscopy of Defects in hexagonal Boron Nitride — •Diana Gühring1, Paul Konrad1, Lina M. Todenhagen2, Andreas Sperlich1, Igor Aharonovich3, Martin S. Brandt2, and Vladimir Dyakonov1 — 1Experimental Physics 6, Julius-Maximilians-Universität Würzburg, 97074 Würzburg, Germany — 2Walter Schottky Institute and School of Natural Sciences, Technical University of Munich, 85748 Garching, Germany — 3School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
In recent years, quantum emitters in 2D materials, such as hexagonal Boron Nitride (hBN), have shown promising applications in various fields of quantum technology. Although the recently discovered boron vacancy (VB−) spin-defect center in hBN is especially promising for nanoscale sensing, a deeper insight into its optical properties remains unexplored. Here, the wavelength-dependent optical excitation in correlation with photoluminescence (PL) is investigated to gain insights into the fundamental characteristics of VB−. Furthermore, the study includes confocally resolved, depth-dependent PL spectroscopy, examining the impact of the environment on the observed PL. The findings presented here contribute to a comprehensive understanding of the optical properties of defects in hBN, offering valuable insights for an efficient exploitation of this promising quantum material.
Keywords: Hexagonal Boron Nitride; Boron Vacancy Defect Center; Photoluminescence Spectroscopy; Wavelength-Dependence; Optical Properties