Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.25: Poster

Wednesday, March 20, 2024, 18:00–20:30, Poster E

Multi-method characterization of initial growth of a MoS₂ layer by atomic layer deposition — •Christian Petersen, Christian Tessarek, Alexander Karg, Alexander Hinz, Niels Osterloh, and Martin Eickhoff — Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

MoS₂ is a 2D semiconductor with exceptional optical and electrical properties, thus considered as a possible future material for ultra-thin film transistors or optoelectronic devices. To overcome size limitations due to exfoliation, synthesis methods like chemical vapour deposition or atomic layer deposition (ALD) bear the possibility for large scale controlled fabrication of pristine monolayers.

In this comprehensive study MoS₂ layers grown by ALD from sub-monolayer to the bilayer regime are analyzed. The surface morphology was investigated by atomic force microscopy (AFM). In addition, X-ray photoelectron spectroscopy (XPS) was used for a chemical analysis while Raman as well as photoluminescence (PL) spectroscopy revealed structural and optical properties. In combination of these methods the monolayer growth regime was identified and a growth model is proposed that is used explain the obtained results.

Keywords: MoS2; atomic force microscopy; atomic layer deposition; Raman spectroscopy; X-ray spectroscopy