Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.26: Poster

Wednesday, March 20, 2024, 18:00–20:30, Poster E

Resonant and non-Resonant Raman spectroscopy on the magnetic semiconductor CrSBr — •Oskar Schröer¹, Pierre-Maurice Piel¹, Zdenek Sofer², and Ursula Wurstbauer¹ — ¹Institute of Physics, Muenster University, Germany — ²Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague, Czech Republic

CrSBr, a van der Waals (vdW) material, exhibits a remarkable combination of attributes. It is an optically active, air-stable magnetic semiconductor, and its vdW structure endows it with magnetic properties characterized by ferromagnetic ordering within each layer and antiferromagnetic coupling between adjacent layers. This unique electronic band structure imparts strong anisotropy, effectively transforming the material into a quasi-one-dimensional system [1]. As a result, CrSBr's direct band gap is marked by robust, anisotropic excitonic resonances, rendering it particularly intriguing to study interaction physics. For opto-spintronic applications, it is imperative to cultivate a profound understanding of its quasi-particles, their interactions, and their intricate interplay with magnetic order. Here, we report on temperature dependent photoluminescence (PL) as well as resonant and non-resonant Raman spectroscopy experiments below and above the Néel temperature to study the impact of the magnetic ordering in bulk CrSBr. We find that peculiar signatures only observable in resonant Raman spectra are indicative for the magnetic phase transition from the anti-ferromagnetic to the paramagnetic state. [1] J. Klein et al. ACS Nano, 17, 5316-5328 (2023)

Keywords: Raman spectroscopy; CrSBr; magnetic semiconductor