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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.28: Poster
Mittwoch, 20. März 2024, 18:00–20:30, Poster E
Ion-irradiated hBN-silicon hybrid photodetectors for near infrared polarized imaging — •Peiting Wen1,2, Mohd Saif Shaikh1,2, Jiang Qu3, Shuyu Wen1, Ye Yuan4, Slawomir Prucnal1, Manfred Helm1,2, Artur Erbe1,2, Shengqiang Zhou1, and Yonder Berencén1 — 1Helmholtz Zentrum Dresden Rossendorf, Dresden, 01328, Germany — 2Technische Universität Dresden, Dresden, 01062, Germany — 3Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany — 4Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China
Beyond being an excellent encapsulant and gate dielectric 2D material, hexagonal boron nitride (hBN) is significant in exploring the use for polarized photonics functionalities. Optically active defects in the h-BN are intriguing, serving not only to enable the optical readout of spins but also to function as quantum emitters that operate at room temperature. Furthermore, the creation of defects in hBN disrupts the symmetry of the lattice and induces an in-plane anisotropic crystal structure. Here, we will uncover intriguing in-plane anisotropic phenomena in Raman response and photoluminescence in 2D hBN subjected to ion irradiation. Leveraging this discovery, we seamlessly integrated the ion-irradiated hBN into room-temperature p-i-n Si detectors. Notably, the ion-irradiated hBN will serve as the polarized-sensitive layer, while Te hyperdoped silicon will facilitate infrared absorption. This hybrid structure highlights its potential as a polarized sensitive photodetector for the applications of image sensing and the ability of compatible with the CMOS process.
Keywords: Ion irradiation; Angle resolved polarized Raman and PL; Defects in hexagonal boron nitride; Near infrared polarized imaging; 2D and 3D hybrid van der Waals heterostructure