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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.35: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster E

Size Dependence of Electrical Properties of Thin Film ZrSe₃ — •Davin Höllmann¹, Lars Thole¹, Sonja Locmelis², and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany

Among the popular group of transition metal chalcogenides, the transition metal trichalcogenides show unique properties, such as a quasi-1D structure [1]. Previous work displayed different electrical properties of ZrSe₃ [2]. Building on this, the influence of the sample geometry on the electrical properties of thin film ZrSe₃ was investigated. The bulk material used was fabricated by a chemical vapor transport method and then exfoliated to achieve thin films.

We determined band gap energies for samples with varying heights. Those are shown to increase linearly from 0.37 eV to 0.63 eV as the thickness of the material decreases from 35 nm to 14 nm. Furthermore, an unusual width dependence of the conductivity in thin ZrSe₃ was found. By comparing the widths and conductivities of wide and narrow samples, a non-linear increase in the conductivity ratio with increasing width ratio was observed.

[1] J. O. Island et al., 2D Materials, 4, 0220033 (2017)

[2] L. Thole et al., ACS Omega, 7, 39913-39916 (2022)

Keywords: Transition Metal Trichalcogenides; ZrSe3; Electrical Transport; Band Gap; Size Effect