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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.56: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster E

Enhancement of wurtzite AlN by ion beam strain engineering: experiments and simulations — •Florian Fuchs^1,2, Holger Fiedler³, John V. Kennedy³, and Jörg Schuster^1,2 — ¹Fraunhofer Insitute for Electronic Nano Systems (ENAS), Chemnitz, Germany — ²Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, Chemnitz, Germany — ³National Isotope Centre, GNS Science, Lower Hutt, New Zealand

We study the piezoelectric properties of wurtzite AlN, and in particular the enhancement of these properties by noble gas [1] and transition metal interstitials.

Using ion-beam implementation, Ne, Ar, Xe, Ti, Zr, and Hf ions were implanted. The measurements show a massive increase in the d₃₃ component of the piezoelectric tensor of up to 30% when using Ar⁺ or Ti⁺. Scanning transmission electron microscopy was utilized to characterize the underlying structure after ion-implantation, demonstrating the occurrence of different interstitial types and the formation of chemically inaccessible noble-gas containing materials.

Density functional theory was used to calculate formation energies of the noble gas interstitials, showing that larger noble gases require a larger formation energy. The most stable positions of the interstitial within the AlN lattice were also determined. Finally, the piezoelectric tensor was calculated and compared to the experimental measurements.
[1] H. Fiedler et al., Adv. Electron. Mater. 7, 2100358 (2021)

Keywords: aluminum nitride; III-nitride material; piezoelectric; strain engineering; density functional theory