Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.59: Poster
Wednesday, March 20, 2024, 18:00–20:30, Poster E
Electrical characterization of n-GaN nanowires to n-Si(111) growth substrates with AlN interlayer — •Juliane Koch1, Patrick Häuser2, Peter Kleinschmidt1, Werner Prost2, Nils Weimann2, and Thomas Hannappel1 — 1TU Ilmenau, Institute for Physics, Fundamentals of Energy Materials, Ilmenau, Germany — 2University of Duisburg-Essen, Components for High Frequency Electronics (BHE), Duisburg, Germany
III-V semiconductor nanowires (NW) have demonstrated high potential as building blocks in a wide range of applications in electronic and optoelectronic devices. In particular, GaN-based nanowires have attracted attention in recent years, especially in the field of UV-LEDs and sensors. For the realization of these devices, special attention must be paid to the surfaces and interfaces, since the electrical properties can be strongly influenced by the surface properties and the sequence of layer deposition. A detailed electrical investigation is therefore necessary, which was done by a four-point measurement method using a multi-tip scanning tunnelling microscopy (MT-STM). For this purpose, we investigate in this work single GaN NWs in an upright standing configuration applying a MT-STM and a built-in scanning electron microscope. We focus on the limiting factors of the current in GaN NWs on an n-doped Si(111) substrate. Our detailed investigations reveal the NWs themselves are highly conductive and that the NW-to-substrate junction as the limiting factor, dominating the overall electrical behavior. The impact of the junction is strongly dependent on the thickness and crystal structure of the AlN layer.
Keywords: III-N; nanowires; electrical characterization; Multi-tip STM