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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.5: Poster
Mittwoch, 20. März 2024, 18:00–20:30, Poster E
Enhanced light-matter interaction in a monolayer of WS2 on top of Mie voids in a high-index material — •Padam Nagarkoti1, Serkan Aslan2, Hossein Ostovar1, Mario Hentschel2, Harald Giessen2, and Ursula Wurstbauer1 — 1Institute of Physics, University of Münster, Münster, Germany — 24th Physics Institute and Research Center SCoPE, University of Stuttgart, Stuttgart, Germany
Light manipulation in subwavelength structures has gained significant attention in recent years. It is mostly based on the optical resonances in the metallic and dielectric materials. In this work, we numerically study the optical properties of Mie voids[1] created in the high index material using finite element method simulation. We calculate and visualize the electric field within the system, illuminating Mie voids from above. The simulation result shows that the light is entirely localized and confined within the void. Peaks in the reflectance spectra indicate resonant modes. We demonstrate that the resonance wavelength can be shifted by changing the dimensions of the void. Increasing either the height or diameter or both dimensions of the void, a red shift in the resonance wavelength is found. Furthermore, we show the coupling of resonant modes with WS2 monolayer on top of the void results in enhanced absorption. The absorption in the WS2 is optimized by tuning the void parameters. These results indicate that the 2D semiconducting materials in combination with Mie voids have a great potential for light trapping and solar energy conversion applications.[1] Hentschel et al. Light: Science & Applications (2023) 12:3
Keywords: Mie voids; Resonant modes