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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.9: Poster
Wednesday, March 20, 2024, 18:00–20:30, Poster E
Properties and Defects of hexagonal boron nitride grown by pulsed laser deposition — •Daniel Klenkert1,2, Benedikt Winter1, Andreas Sperlich2, Vladimir Dyakonov2, and Jens Ebbecke1 — 1Technology Campus Teisnach Sensor Technology, Deggendorf Institute of Technology, 94244 Teisnach — 2Experimental Physics 6, Julius-Maximilians-University of Würzburg, 97074 Würzburg
Hexagonal boron nitride (hBN) has recently attracted significant research interest due to its unique properties. These include the chemical stability, its wide bandgap and the ability to host color centers inside the bandgap. These color centers exhibit bright and stable single photon emission at room temperature, which makes them interesting candidates for applications such as quantum communication and quantum sensing. To enable the direct pumping of color centers we examine the possibility to deposit hBN directly on LED and laser diode facets. As an intermediate step in this development, we report the results from spectroscopic measurements of hBN layers grown by pulsed laser deposition on silicon substrates as well as first tests on LEDs.
Keywords: hexagonal boron nitride; pulsed laser deposition; single photon emitters; 2D materials