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HL: Fachverband Halbleiterphysik
HL 37: Poster IV
HL 37.10: Poster
Mittwoch, 20. März 2024, 18:00–20:30, Poster F
Characterizing broadening effects and hysteresis of donor-bound excitons in 28-Si:P — •Dolores García de Viedma1, Nico Eggeling1, Finja Tadge1, N.V. Abrosimov2, Jens Hübner1, and Michael Oestreich1 — 1Leibniz Universität Hannover, Germany — 2IKZ Berlin, Germany
Our current work emphasizes how different effects affect the broadening of excitonic transitions at phosphorous donors in ultrapure isotopically enriched 28-Si. One main contribution is given by statistical electric field fluctuations due to spontaneous ionization of donors. Another point of interest is the variation of sample temperature, resulting in a shift of the bandgap [1]. Measurements are performed by LockIn-Amplification of a transmitted probe-laser signal. Linewidth data at different temperatures and varying above bandgap excitation enable the resolution of their respective influence on the line broadening for donor-bound excitons. The results are compared to numerical and analytical calculations.
[1] Sauter, et al. Phys. Rev. Research. 5, 013182, (2023).
Keywords: Semiconductor; Silicon; Linewidth; Broadening; Experiment