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HL: Fachverband Halbleiterphysik
HL 37: Poster IV
HL 37.13: Poster
Wednesday, March 20, 2024, 18:00–20:30, Poster F
Towards optical interfaces to spin qubits with epitaxial GaAs quantum dots — •Selma Delić1,2, Xuelin Jin1,2, Sebastian Kindel2, Paola Atkinson3, Natalia Demarina4, Hendrik Bluhm2, Hans-Georg Babin5, Arne Ludwig5, Nils von den Driesch1,6, Alexander Pawlis1,6, Detlev Grützmacher1,2, and Beata Kardynał1,2 — 1Peter Grünberg Institut (PGI) 9, Forschungszentrum (FZ) Jülich, 52428 Jülich — 2Department of Physics, RWTH, 52074 Aachen — 3Institut des Nano Sciences de Paris, CNRS UMR 7588, Sorbonne Université, 75005 Paris — 4PGI 2, FZ Jülich — 5Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum — 6PGI 10, FZ Jülich
Singlet-triplet (S-T) qubits created in gate-defined quantum dots (GDQD) at the GaAs/AlGaAs interface are promising candidates in quantum information processing. Due to the absence of hole confinement, S-T qubits cannot be directly coupled coherently to photonic qubits, which can be information carriers in quantum networks. One solution to this problem is coupling a GDQD to an epitaxial QD.
In this contribution, we show the design of heterostructures to fabricate optical interfaces to spin qubits in GaAs. We present the status of the optical and electrical characteristics of heterostructure wafers and the status of the device fabrication, focusing on the progress in spatial alignment of the two types of QDs. Using atomic force microscopy imaging, we show that the alignment can be realised by identifying and locating defects on the heterostructure's surface, which originate from the growth of GaAs QDs through local droplet etching.
Keywords: quantum dots; spin qubits; quantum communication