Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Poster IV
HL 37.14: Poster
Wednesday, March 20, 2024, 18:00–20:30, Poster F
Characterisation of GaN/AlGaN-ISFET Wheatstone bridge pH-sensors — •Alexander Hinz1, Stephan Figge1, and Martin Eickhoff1,2 — 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Bibliotheksstraße 1, 28359 Bremen, Germany
GaN/AlGaN-heterostructure field-effect transistors as pH-sensors were investigated. A Wheatstone bridge design is used to compensate environmental drift effects due to temperature and persistent photocurrent. In that line sputtered Al2O3 is used as a passivation layer for the reference transistors. In addition, the integration of an on-chip Pt counter electrode will be discussed. Furthermore, the impact of a a GaN cap compared to an AlGaN will be analysed. The stability and the evolution of the pH sensitivity with time were investigated.
Keywords: GaN; ISFET