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HL: Fachverband Halbleiterphysik

HL 37: Poster IV

HL 37.14: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster F

Characterisation of GaN/AlGaN-ISFET Wheatstone bridge pH-sensors — •Alexander Hinz¹, Stephan Figge¹, and Martin Eickhoff^1,2 — ¹Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — ²MAPEX Center for Materials and Processes, University of Bremen, Bibliotheksstraße 1, 28359 Bremen, Germany

GaN/AlGaN-heterostructure field-effect transistors as pH-sensors were investigated. A Wheatstone bridge design is used to compensate environmental drift effects due to temperature and persistent photocurrent. In that line sputtered Al2O3 is used as a passivation layer for the reference transistors. In addition, the integration of an on-chip Pt counter electrode will be discussed. Furthermore, the impact of a a GaN cap compared to an AlGaN will be analysed. The stability and the evolution of the pH sensitivity with time were investigated.

Keywords: GaN; ISFET