Berlin 2024 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 37: Poster IV

HL 37.15: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster F

Impact of stress current on electro-optical properties of the active cavity region in 850 nm oxide-confined vertical-cavity surface-emitting lasers (VCSEL) — •Arndt Jaeger¹, Nikolay Ledentsov Jr.², Helmut Meinert¹, Sebastian Haberkern¹, Kevin Ehling¹, Maximilian Stock¹, Ilya E. Titkov², Oleg Yu. Makarov², and Nikolay N. Ledentsov² — ¹Esslingen University of Applied Sciences, Flandernstrasse 101, 73732 Esslingen, Germany — ²VI Systems GmbH, Hardenbergstrasse 7, 10623 Berlin, Germany

VCSELs are used as efficient light sources for high-speed datacom, sensor and free-space applications. Optimization of the device performance includes an understanding of their degradation behavior under high current stress. VCSELs employing different doping of the cavity region are studied utilizing reverse current-voltage (IV) characteristics as well as photocurrent spectroscopy (PCS). Reverse IV characteristics exhibits avalanche breakdown enabling an estimation of the electric field in the cavity region. PCS reveals quantum well transitions redshifting with reverse bias due to quantum-confined Stark effect. Whereas VCSELs with a controlled doping do not show any changes VCSELs without doping of the cavity region exhibit reduced breakdown voltages being accompanied by operation-induced redshifts of quantum well transitions. These results are discussed in terms of different processes occurring during high current operation.

Keywords: laser diode; vertical-cavity laser; quantum-confined Stark effect