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HL: Fachverband Halbleiterphysik

HL 37: Poster IV

HL 37.19: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster F

Ultrafast Femtosecond Laser Induced Dynamics of Black Silicon — •Christelle Ines Kana Mebou¹, Tobias Zier², and Martin. E. Garcia¹ — ¹Institut für Physik, Universität Kassel, Germany — ²Department of Physics, University of California Merced

Modern materials science has made manipulating material properties at the nanoscale a major focus. Due to its potential to enable novel applications in optoelectronics, photonics, and nanotechnology, the interaction of strong femtosecond laser pulses with black silicon has drawn a lot of attention. In this theoretical investigation, we investigate the dynamical and structural alterations brought about by the laser irradiation as we examine the motion of Silicon doped with Sulfur under a femtosecond laser pulse. We use a variety of methods to clarify how varied sulphur atom concentrations affect the behaviour of the material. Starting from initially randomly distributed S atoms, we simulated the ultrashort time dynamics of the system after laser heating. This research sheds light on the intricate relationship between laser-induced dynamics and dopant concentration, providing a conceptual framework that may be used to direct the development of future optoelectronic devices.

Keywords: Black Silicon; Femtosecond Laser; Ultrashort time dynamics; Nanoscale; Theoretical