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HL: Fachverband Halbleiterphysik
HL 37: Poster IV
HL 37.19: Poster
Wednesday, March 20, 2024, 18:00–20:30, Poster F
Ultrafast Femtosecond Laser Induced Dynamics of Black Silicon — •Christelle Ines Kana Mebou1, Tobias Zier2, and Martin. E. Garcia1 — 1Institut für Physik, Universität Kassel, Germany — 2Department of Physics, University of California Merced
Modern materials science has made manipulating material properties at the nanoscale a major focus. Due to its potential to enable novel applications in optoelectronics, photonics, and nanotechnology, the interaction of strong femtosecond laser pulses with black silicon has drawn a lot of attention. In this theoretical investigation, we investigate the dynamical and structural alterations brought about by the laser irradiation as we examine the motion of Silicon doped with Sulfur under a femtosecond laser pulse. We use a variety of methods to clarify how varied sulphur atom concentrations affect the behaviour of the material. Starting from initially randomly distributed S atoms, we simulated the ultrashort time dynamics of the system after laser heating. This research sheds light on the intricate relationship between laser-induced dynamics and dopant concentration, providing a conceptual framework that may be used to direct the development of future optoelectronic devices.
Keywords: Black Silicon; Femtosecond Laser; Ultrashort time dynamics; Nanoscale; Theoretical