Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 37: Poster IV

HL 37.20: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster F

MOVPE grown InGaAs/GaAs quantum dots as gain medium in semiconductor lasers for the telecom O-band — •Philipp Noack, Nathalie Benzler, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart

Conventional quantum well gain media are essentially used in every commonly available laser diodes. These devices are easy to produce and are cheap in mass production. However, there are wavelength ranges, that can not be covered by quantum well gain media, due to the constraints in lattice-matched substrates and materials. Semiconductor quantum dots (QDs) as gain media are able to reach these wavelength ranges, while also providing lower threshold currents, higher temperature stability and fast gain recovery times.

To reach emission in the telecom O-band, we grow InGaAs QDs on a GaAs substrate. We achieve growth of uniform high density quantum dots in single and in up to ten vertically stacked layers by carefully controlling a variety of growth parameters, like temperature, V/III ratio and the stabilization of the surface during growth.

These quantum dot layers are incorporated into edge emitting lasers to investigate the performance as well as the temperature stability of these devices. In this way we can make sure, that vertically stacked quantum dot layers increase the modal gain without introducing defects that increase the intrinsic optical losses.

Keywords: InGaAs; Quantum Dot; Laser; Telecom O-band; MOVPE