Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Poster IV
HL 37.2: Poster
Wednesday, March 20, 2024, 18:00–20:30, Poster F
Photoluminescence studies of erbium implanted GaAs nanostructures — •Nico Brosda1, Christian Düputell1, Natalie Jung2, Lisa Kreuzer2, Nils C. Gerhardt2, Martin R. Hofmann2, and Andreas D. Wieck1 — 1Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität-Bochum — 2Lehrstuhl für Photonik und Terahertztechnologie, Ruhr-Universität Bochum
The rare earth element erbium emits light in the wavelength range of around 1.54 µm; this coincides with the absolute absorption minimum of optical fibres in the so-called C-band. Molecular beam epitaxial grown GaAs was used as a semiconductor matrix for erbium; the implantation was carried out with the help of a focused ion beam system at ion energies around 250 keV. Due to the damage to the crystal structure, thermal annealing is necessary. Utilizing photoluminescence (PL) measurements, statements about optimal parameters and dependencies can be made.
The recorded PL spectra at different implantation and annealing parameters were compared. A temperature range of 700 ∘C to 800 ∘C and implantation into 300 ∘C hot samples was particularly advantageous for maximum erbium luminescence. Furthermore, a temperature-induced quenching of erbium luminescence was observed with a simultaneous increase in peak widths. Implantation of Er2O3 significantly increased the total intensity. By correlating PL lines with optical transitions in different crystal field symmetries, it can be concluded that different erbium centres are present in various crystal field symmetries.
Keywords: GaAs; Photoluminescence; Erbium; Focused Ion Beam; Rapid Thermal Annealing