Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: Poster IV

HL 37.4: Poster

Wednesday, March 20, 2024, 18:00–20:30, Poster F

Semiconductor membrane transfer for circular bragg gratings fabrication — •Juan Nicolas Claro Rodriguez, Dennis Deutsch, Hermann Kahle, Klaus D Jons, and Dirk Reuter — PhoQS Institute, CeOPP, and Department of Physics, Paderborn University, Paderborn

Semiconductor quantum dots are promising candidates to fulfill the requirements on the emission properties. Newly developed InGaAs quantum dots grown on a InP substrate using MBE deposition [2] are interesting for long-distance communication as they emit in the telecom C-band, where standard optical fibers exhibit an absorption minimum. The lack of brightness can be tackled by embedding them into cavity structures, improving the indistinguishability of the photons and entanglement fidelity. Among the different cavity designs, hybrid circular Bragg gratings stand out for their high and broad-range photon collection efficiency together with their elevated Purcell factor. These characteristic features are achievable thanks to the addition of a backside mirror spaced by a transparent medium from the semiconductor membrane containing the quantum dot which allows the reflection of the backscattered photons to the collecting lens [3]. Here, we present a membrane transfer method, a crucial step for achieving the desired cavity configuration. It involves growing the backside mirror on top of the sample before transferring the layer structure onto a new carrier using a press-bonding device. Subsequently, the original InP substrate is removed by wet chemical etching with HCl to allow for posterior illumination of the quantum dots.

Keywords: Circular Bragg gratings; Quantum emitters; Quantum Dots