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HL: Fachverband Halbleiterphysik

HL 37: Poster IV

HL 37.5: Poster

Mittwoch, 20. März 2024, 18:00–20:30, Poster F

Towards deterministic color centers in graphene-covered hexagonal boron nitride — •Ataur Rahaman Bhuiyan, Hossein Ostovar, Robert Schmidt, Philipp Wiesener, Harry Mönig, Rudolf Bratschitsch, and Ursula Wurstbauer — University of Münster, Institute of Physics, Wilhelm-Klemm Str 10, 48149 Münster

Deterministic generation and control of single photon emitters are of importance for quantum information technology. Such single-photon emitters (SPEs) have recently been discovered in various two-dimensional materials. Their properties are strongly dependent on the host materials and differ e.g. between TMDCs or hBN but also if the emitters originate from defects, strain, or moiré-potentials in twisted structures [1]. In this work, we investigate the generation of defects in hexagonal boron nitride (hBN) covered by graphene with the vision to ion-implant color center functional at room temperature. In order to find a suitable parameter range during ion implantation, the sputtering yield in dependence on ion materials (i.e. argon and helium), acceleration voltage, target material combination, and thickness (depth profile) has been studied in details by thorough SRIM (Stopping and Range of Ions in Matter) simulations. Argon sputtering is guided by those simulations. Prior and after to sputtering the hetero stacks are characterized. In this poster we discussed the findings of our combined simulation and experimental work to implant color centers that are presumably carbon-based within couple of hBN layers [1]. [1] S. Michaelis de Vasconcellos et al. Physica status solidi b259, 2100566 (2022).

Keywords: hetero stack; SRIM simulations; ion implantation; defects; single-photon emitter