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HL: Fachverband Halbleiterphysik
HL 37: Poster IV
HL 37.9: Poster
Mittwoch, 20. März 2024, 18:00–20:30, Poster F
Simulation of statistical electric field fluctuations in 28-Si:P — •Finja Tadge, Nico Eggeling, Jens Hübner, and Michael Oestreich — Leibniz Universität Hannover, Germany
In this work, statistical electric field fluctuations are examined using the Monte-Carlo method to simulate the linewidth of the D0X excitonic transition in ultra-pure isotopically enriched 28-Si:P. The electric field inside a solid-state matrix is modelled with the help of a random distribution of ionized donors and acceptors as it would occur at temperatures around 4K. Distribution functions describing both the radius between ionized donors and acceptors and the electric field can be deduced. Using the Thomas-Fermi-Approximation the electric field distribution influencing optically active centres can be calculated. Furthermore, it is shown, that the mean value of the electric field as well as its variance converge against a finite value for diverging system radii and donor ionization probabilities. The resulting electric field distribution shows an E−5/2 dependency that is well supported by the theoretical model and is additionally in good agreement with the experimentally determined spectrum of the excitonic transition.
Keywords: Semiconductor; Linewidth; Broadening; Simulation