Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 38: Oxide Semiconductors II

HL 38.5: Vortrag

Donnerstag, 21. März 2024, 10:45–11:00, ER 325

Growth, faceting and thickness effects of α-Ga₂O₃ and α-(In_xGa_1−x)₂O₃ on m-plane α-Al₂O₃ by molecular beam epitaxy — •Martin S. Williams¹, Manuel Alonso-Orts¹, Marco Schowalter¹, Alexander Karg¹, Sushma Raghuvansy¹, Jon P. McCandless², Debdeep Jena², Andreas Rosenauer¹, Martin Eickhoff¹, and Patrick Vogt¹ — ¹Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, Bremen, 28359, Germany — ²School of Electrical and Computer Engineering, Cornell University, 229 Phillip’s Hall, 14853, New York, United States of America

Gallium oxide (Ga₂O₃) is a promising ultra-wide band gap semiconductor, especially for high-power electronics which are crucial for reducing loss in power converters [1]. The corundum-structured phase (α-Ga₂O₃) has seen particular interest – owing to its large band gap, of 5.3 eV [2]. Its isostructurality to α-Al₂O₃ allows for band gap engineering of α-(Al_xGa_1−x)₂O₃ over the entire Al compositional range [2]. Achieving single-crystalline α-Ga₂O₃ thin films is therefore important for developing future α-Ga₂O₃-based devices.

In this work, conventional plasma-assisted molecular beam epitaxy (MBE) and metal-oxide-catalysed epitaxy (MOCATAXY) have been employed to grow α-Ga₂O₃(1010)/α-Al₂O₃(1010). By varying the O-to-Ga and In-to-Ga flux ratios, a systematic approach was taken to characterise the films and develop a growth diagram.

[1] C. V. Prasad and Z.S. Rim, Materials Today Physics 27 (2022).

[2] R. Jinno et al., Science Advances 7 (2021).

Keywords: Gallium oxide; MBE; Epitaxy; TEM; Raman