HL 38: Oxide Semiconductors II
Donnerstag, 21. März 2024, 09:30–11:30, ER 325
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09:30 |
HL 38.1 |
Energy and thickness dependent intensity characteristics of simultaneous XEOL-XAS measurements of ZnO — Sergiu Levcenko, Konrad Ritter, Hans H. Falk, Timo Pfeiffelmann, Lukas Trefflich, Edmund Welter, Marius Grundmann, and •Claudia S. Schnohr
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09:45 |
HL 38.2 |
Simulation of multi-component target ablation: a novel combinatorial pulsed laser deposition technique — •Arne Jörns, Holger von Wenckstern, and Marius Grundmann
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10:00 |
HL 38.3 |
Molecular beam epitaxy of ε/κ-Ga2O3 using In as a surfactant — •Alexander Karg, Alexander Hinz, Marco Schowalter, Niklas Krantz, Patrick Vogt, Stephan Figge, Andreas Rosenauer, and Martin Eickhoff
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10:15 |
HL 38.4 |
Ultrawide Bandgap Semiconductor Cubic Spinel Zn2GeO4 Epitaxial Thin Films — •Jingjing Yu, Sijun Luo, and Marius Grundmann
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10:30 |
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15 min. break
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10:45 |
HL 38.5 |
Growth, faceting and thickness effects of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy — •Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, and Patrick Vogt
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11:00 |
HL 38.6 |
Analysis and prediction of thickness distributions for combinatorial pulsed laser deposition — •Clemens Petersen, Holger von Wenckstern, and Marius Grundmann
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11:15 |
HL 38.7 |
Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy — •Andrea Ardenghi, Oliver Bierwagen, Jonas Lähnemann, Joe Kler, Andreas Falkenstein, Manfred Martin, and Piero Mazzolini
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