Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: Perovskite and Photovoltaics II (joint session HL/KFM)
HL 42.7: Vortrag
Donnerstag, 21. März 2024, 11:00–11:15, EW 203
Additive engineering for high bandgap perovskite absorber for application in triple-junction solar cells — •Athira Shaji1, Minasadat Heydarian1, Maryamsadat Heydarian1, Patricia S. C. Schulze1, Juliane Borchert1,2, and Andreas Bett1 — 1Fraunhofer Institute for Solar Energy Systems — 2INATECH, University of Freiburg
Multi-junction solar cells can overcome the theoretical efficiency limit of state-of-the-art silicon single-junction solar cell. Recently, perovskite-silicon tandem solar cells have achieved high power conversion efficiency (PCE) of 33.9% on small area. By adding a third junction this PCE can be further increased. For a top cell in a triple-junction solar cell, a high band gap (HBG) perovskite is required. However, there are several challenges associated with such HBG perovskites such as photo-induced phase segregation and high VOC deficit1. In addition, the high Br content in the HBG perovskite composition has been lead to poor perovskite film formation and morphology which can exacerbate the mentioned issues1. Suppression of phase segregation and increased grain size can be achieved by improving the perovskite crystallization via additive engineering1. Here, we employ a triple cation perovskite composition with general formula Cs0.05(FA1−x MAx)0.95Pb(I1−xBrx)3 (Eg >1.83 eV) which is used as the top cell absorber2. We investigate the effects of additives on this perovskite crystallization and grain size1.
1.Chen, B. et al. Joule 2019, 3(1), 177-190.
2.Heydarian, M. et al. ACS Energy Lett. 2023, 8(10), 4186-4192.
Keywords: Perovskite; High bandgap; Triple junction solar cells; Additive