Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Nitrides: Preparation and characterization II
HL 44.4: Vortrag
Donnerstag, 21. März 2024, 14:45–15:00, EW 015
Metal modulated growth of cubic InGaN by Molecular Beam Epitaxy — •Silas A. Jentsch1, Mario F. Zscherp1, Nicolai M. Gimbel1, Anja Henss2, Donat J. As3, Sangam Chatterjee1, and Jörg Schörmann1 — 1Institute of Experimental Physics I, Justus-Liebig-University Giessen, Germany — 2Institute of Physical Chemistry, Justus-Liebig-University Giessen, Germany — 3Department of Physics, University Paderborn, Germany
Cubic InGaN alloys are candidate materials for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV towards the mid infrared. However, there still exist many challenges with the growth of indium-bearing cubic nitrides. Here we apply a metal-modulated growth approach to improve the morphological and structural quality of the epitaxially grown nitride films as compared to the conventional growth in molecular beam epitaxy.
We report cubic InGaN layers (x(In) = 0.27) grown by metal-modulated plasma-assisted molecular beam epitaxy on c-GaN/AlN/3C-SiC/Si templates which should nominally causes the formation of alternating GaN and InN layers. Surprisingly, we found the formation of a InGaN/GaN superstructures for short InN growth times and a complete mixture of GaN and InN resulting in homogeneous c-InGaN layers for long InN growth times. High-resolution X-ray diffraction (HR-XRD), Atomic Force Microscopy (AFM) and photoluminescence studies reveals the structural and optical properties of our c-InGaN layers.
Keywords: InGaN; MBE; XRD; Superlattice