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HL: Fachverband Halbleiterphysik
HL 44: Nitrides: Preparation and characterization II
HL 44.9: Vortrag
Donnerstag, 21. März 2024, 16:15–16:30, EW 015
MBE growth of cubic InxGa1-xN over the entire GaN/InN composition range — •Mario F. Zscherp1, Silas A. Jentsch1, Marius J. Müller1, Vitalii Lider2, Celina Becker2, Limei Chen1, Mario Littmann3, Falco Meier3, Andreas Beyer2, Detlev M. Hofmann1, Donat J. As3, Peter J. Klar1, Kerstin Volz2, Sangam Chatterjee1, and Jörg Schörmann1 — 1Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen — 2Materials Science Center and Faculty of Physics, Philipps-University Marburg — 3Department of Physics, University Paderborn
Cubic InxGa1-xN is a candidate material for optoelectronic applications because they lack internal fields and promise to cover a vast range of emission wavelengths. However, the large discrepancy in interatomic spacing and growth temperatures of GaN and InN hinder the growth of c-InxGa1-xN with x(In) > 0.3. Several publications even report spinodal decomposition for intermediate In contents.
We overcome this perceived miscibility gap of c-GaN and c-InN using molecular beam epitaxy. The c-InxGa1-xN layers are grown on smooth c-GaN/AlN/3C-SiC/Si templates. Reciprocal space maps precisely monitor the composition, phase purity, and strain relaxation of the thin films. The photoluminescence data clearly demonstrate the full tunability of the emission energy from 0.71 to 3.24 eV. Furthermore, scanning transmission electron microscopy, photoluminescence data, and Raman spectroscopy infer a CuPt-type ordering for intermediate In contents as well as short-range ordering for all compositions.
Keywords: molecular beam epitaxy; InGaN; zincblende; transmission electron microscopy; x-ray diffraction