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HL: Fachverband Halbleiterphysik
HL 45: Materials and Devices for Quantum Technology II (joint session HL/QI)
HL 45.6: Vortrag
Donnerstag, 21. März 2024, 15:45–16:00, EW 203
All-dry Pick-Up and Transfer Method for Quantum Emitters in hBN — •Mohammad Nasimuzzaman Mishuk1,2, Mouli Hazra2, Anand Kumar1,2, and Tobias Vogl1,2 — 1Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany — 2Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
Quantum emitters (QE) hosted by defects in hexagonal Boron Nitride (hBN) can operate at room temperature, serving as stable single photon emitters. They can also be integrated into various materials and devices, making them highly versatile in quantum technologies and photonic integrated circuits. However, creating these quantum emitters directly on different surfaces is challenging. That's why more often they are created on standard silicon chip coated with thin silicon dioxide layer. Owing to this difficulty, various transfer processes are developed which are mostly wet. In this study, we present an all-dry transfer method for transferring quantum emitters onto arbitrary substrates. Using our pick-up and transfer method, we have achieved a success probability of 1 in 4 for any single photon emitter. The validity of our results has been confirmed through second-order correlation measurements. We are actively working on improving its quality, quantity, and accuracy.
Keywords: 2D materials; hBN; Quantum Emitters; Transfer Method