Berlin 2024 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 46: Transport properties II
HL 46.1: Talk
Thursday, March 21, 2024, 15:00–15:15, ER 325
Monitoring Cation Exchange in Individual Semiconductor Nanowires via Transistor Characterization — •Daniel Lengle1,2, Maximilian Schwarz1, Alf Mews1,2, and August Dorn3 — 1Institute of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany — 2The Hamburg Center for Ultrafast Imaging, 22761 Hamburg, Germany — 3Innovationszentrum Niedersachsen, 30159 Hannover, Germany
The properties of nanostructures are largely determined by their material composition and their geometry. Chemical cation-exchange reactions allow for a controlled change of the elemental composition within a nanostructure while its geometry is preserved. However, controlling the exchange at the single particle level is challenging. Here, we investigate the successive cation-exchange with silver on individual semiconducting nanowires. For this purpose, nanowire field-effect transistors are fabricated via optical lithography. Then the cation exchange is performed by submerging the device in a silver-nitrate solution. By precisely timing the duration in the solution, the reaction progress and thus the exchange degree can be controlled. Transport measurements reveal a change in conductivity, charge carrier concentration, and mobility with progressing cation exchange. The approach presented here shows an efficient way to monitor the transport properties of individual nanostructures with a minimum of interference in the reaction. Nanowires with carefully adjusted elemental composition, and thus adjusted optoelectronic properties, could find a way into electrical devices such as sensors, transistors or batteries.
Keywords: Cation Exchange; Semiconductor Nanowires; Electrical Transport; Nanowire Field-Effect Transitor