Berlin 2024 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 46: Transport properties II

HL 46.3: Vortrag

Donnerstag, 21. März 2024, 15:30–15:45, ER 325

Simulation of Charge-Carrier Transport in Cadmium Sulfide Nanowires — •Carlo Höhmann, Moritz Wehrmeister, Daniel Lengle, Alf Mews, and Tobias Kipp — Physikalische Chemie, Hamburg, Deutschland

Theoretical simulations form the backbone of experiments and help to confirm physical models, find material properties, and also provide more detail in results such as spatial resolution. Here we report on a numerical finite element simulation of single electrically contacted cadmium sulphide (CdS) nanowires using COMSOL Multiphysics software. The focus of the simulation is on the surface potential, the band alignment and the current-voltage behavior. The results are compared with experimental results obtained by local photocurrent microscopy and Kelvin probe force microscopy on single wet-chemically synthesized CdS nanowires. This comparison gives us a better understanding of the underlying physics and provides material parameters that are difficult to obtain by experiments alone.

We show that simulations based on the drift-diffusion approach including trap-assisted charge-carrier recombination at the surface, local photo excitation and ohmic metal contacts on the surface, is able to provide comparable results and new insights, for example, into the type of recombination or the exact location of the electrons and holes. We can also see how the system behaves under extreme conditions, such as high applied voltages or temperatures.

Keywords: Semiconductor; Electrical Transport; Simulation; Nanowires