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HL: Fachverband Halbleiterphysik
HL 47: 2D Materials: Heterostuctures
HL 47.5: Vortrag
Donnerstag, 21. März 2024, 16:00–16:15, EW 201
Evaluation of Disorder in Graphene Layers via Raman Spectroscopy for Enhanced Device Fabrication in Microelectronics — •Farnaz Majnoon1, Rasuole Lukose1, Daniele Capista1, Christian Wenger1,2, and Mindaugas Lukosius1 — 1IHP-Leibniz Institute für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
Graphene, a two-dimensional (2D) material, has emerged as a promising candidate for next-generation microelectronics owing to its exceptional electrical, mechanical, and thermal properties. In this study, we employ Raman spectroscopy as a powerful tool to probe the distinctiveness of graphene. The investigation focuses on elucidating the relationship between Raman spectral features and the quality of graphene layers, offering insights into its suitability for industrial microelectronics applications. Our analysis delves into the vibrational modes exhibited by graphene, exploring the effects of layer thickness, defects, and doping on the Raman spectra. The distinct G, D, and 2D bands provide crucial information regarding the structural integrity and quality of graphene, crucial parameters in evaluating its viability for microelectronic devices. We examine the impact of various contact methods and materials on graphene, aiming to comprehend their role in introducing disorder. Through Raman spectroscopy, this study reveals changes in graphene's properties influenced by these factors. These insights are pivotal in identifying the origins and scale of disorder, essential for refining fabrication processes and to achieve superior performance.
Keywords: Graphene; Raman; Fabrication; Disorder; Microelectronic devises