Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 47: 2D Materials: Heterostuctures

HL 47.8: Vortrag

Donnerstag, 21. März 2024, 16:45–17:00, EW 201

Light Sources with Bias Tunable Spectrum based on van der Waals Interface Transistors — •Nicolas Ubrig¹, Hugo Henck¹, Diego Mauro¹, Ignacio Gutiérrez-Lezama¹, Luis Balicas², and Alberto Morpurgo¹ — ¹Department of Quantum Matter Physics, University of Geneva — ²ational High Magnetic Field Laboratory, Tallahassee, FL 32310, USA

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices is difficult. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage --by suitably selecting the material forming the interfaces-- and on-chip, by changing the bias to modify the device operation point. As the physical mechanism responsible for light emission is robust and does not depend on details of the interfaces, these structures are compatible with simple large areas device production methods.

Keywords: Interlayer Excitons; Transisiton metal dichalcogenides; Light emitting devices