Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Quantum Dots and Wires: Growth
HL 48.1: Vortrag
Donnerstag, 21. März 2024, 15:00–15:15, EW 202
Doping of GaAs/AlGaAs core-shell nanowires by ion implantation — •Yuxuan Sun1,2, Donovan Hilliard1,2, Emmanouil Dimakis1, Shengqiang Zhou1, Manfred Helm1,2, and Slawomir Prucnal1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; — 2Technische Universität Dresden, 01062 Dresden, Germany
III-V semiconductor core-shell nanowires are promising for high electron mobility transistors and one-dimensional electron transport, which can be integrated on a nanoscale platform. Core-shell heterostructures are typically designed so that electrons are confined inside the thin core, which is surrounded by a relatively thick undoped shell with wider bandgap. This makes it challenging to form ohmic contacts for the measurement of the electrical properties of the core or the fabrication of devices. Here, we present the contact engineering to GaAs:Si/AlxGa1-xAs core-shell nanowires using selective area ion-implantation of Sulphur. The properly chosen energy of the ion-implantation and selective area implantation allow precise control of the carrier concentration just below the metal contact. Such an approach provides electrical connection to the core nanowire without degrading the crystal structure of the entire nanowire. For electrical activation of implanted impurities we have used ms-range Flash lamp annealing and rapid thermal annealing. Detailed structure, optical and electrical characterization of the nanowires will be presented.
Keywords: GaAs; Nanowire; Doping