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HL: Fachverband Halbleiterphysik
HL 48: Quantum Dots and Wires: Growth
HL 48.2: Talk
Thursday, March 21, 2024, 15:15–15:30, EW 202
Influence of InAl deposition amount and annealing time on nanohole formation by local droplet etching on In0.52Al0.48As layers — •Dennis Deutsch1, Christopher Buchholz1, Viktoryia Zolatanosha1,2, Klaus D. Jöns1,2, and Dirk Reuter1,2 — 1Department of Physics, Paderborn University, Paderborn, Germany — 2Institute for Photonic Quantum Systems (PhoQS), Paderborn University, Paderborn, Germany
Semiconductor quantum dots are excellent candidates for on-demand generation of entangled photon pairs. Especially GaAs/AlxGa1−xAs quantum dots grown via the local droplet etching approach have been proven to be very promising sources, due to their low strain and excellent in-plane symmetry. However, for the GaAs/AlxGa1−xAs system one is limited to photon emission around 780 nm and ideally photons would be generated in the optical C-band (1530 - 1565 nm) to utilize established fiber networks. One solution is to transfer the local droplet etching technique to the InP/InyAl1−yAs/InxGa1−xAs system. In this contribution we report on the etching of nanoholes into In0.52Al0.48As layers by depositing InAl droplets. We show how the amount of deposited material influences the size, shape and density of the drilled nanoholes. We further display the effect of varying the annealing time after the initial droplet droplet deposition step. Finally, we present that the filled nanoholes emit light when embedded in an In0.52Al0.48As matrix and that we can create quantum dots that show emission up into the optical C-band.
Keywords: Molecular beam epitaxy; Local droplet etching; Quantum dots; Telecom C-band