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HL: Fachverband Halbleiterphysik
HL 48: Quantum Dots and Wires: Growth
HL 48.3: Talk
Thursday, March 21, 2024, 15:30–15:45, EW 202
High-quality single InGaAs/GaAs quantum dots grown on a CMOS-compatible silicon substrate for quantum photonic applications — •Imad Limame1, Peter Ludewig2, Ching-Wen Shih1, Marcel Hohn1, Chirag C. Palekar1, Wolfgang Stolz2, and Stephan Reitzenstein1 — 1ISSP, Technical Univ. of Berlin, DE — 2NAsP III/V GmbH, Philipps-Univ. of Marburg, DE
Despite significant advances in silicon photonics employing classical light sources, advancements in silicon-compatible quantum photonics have been hindered by the challenge of achieving direct and high-quality growth of single quantum dots (QDs) on the silicon platform. While there have been advancements in post-growth QD integration on silicon, the intricacies of the process restrict scalability and cost-effectiveness. Silicon quantum photonics seeks to harness the unique properties of quantum systems-such as superposition, entanglement, and photon indistinguishability-to facilitate a cost-effective integration of cutting-edge silicon electronics and advanced quantum photonics.
We report on the direct growth of InGaAs QDs with excellent quantum optical properties on a CMOS-compatible silicon substrate [1]. The heteroepitaxy of GaAs heterostructures on silicon is accomplished through a GaP buffer layer. Under non-resonance excitation, we measure high multi-photon suppression of 0.037, and good photon indistinguishability of 0.66. Furthermore, we achieve an extraction efficiency of up to 18.35% for the as-grown QDs with a backside distributed Bragg mirror, showcasing the significant potential of the developed approach.
[1] Limame, I. et al., Preprint at arXiv:2311.14849 (2023)
Keywords: Single photon sources; CMOS Technology; Quantum dots on silicon; MOCVD; silicon quantum photonics