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HL: Fachverband Halbleiterphysik
HL 48: Quantum Dots and Wires: Growth
HL 48.4: Talk
Thursday, March 21, 2024, 15:45–16:00, EW 202
Droplet-etched GaAs quantum dots integrated in AlGaAs photonic circuits as a source of highly indistinguishable photons — •Ulrich Pfister1, Florian Hornung1, Stephanie Bauer1, Dee Rocking Cyrlyson’s2, Ponraj Vijayan1, Ailton J. Garcia Jr2, Saimon Filipe Covre da Silva2, Michael Jetter1, Simone L. Portalupi1, Armando Rastelli2, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, Germany — 2Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
Droplet-etched GaAs quantum dots (QDs) are a promising source of single and highly
indistinguishable photons. Their optical properties like narrow wavelength distribution, short decay times, linewidths near
to the Fourier limit and the resulting highly indistinguishable photons make them highly appealing for
several quantum technologies [1].
We demonstrate the first integration of these QDs in photonic
integrated circuits consisting of single-mode waveguides and multi-mode interference
splitters [2].Under pulsed resonant excitation we achieved high single photon purities of up to 1−g(2)(0)=0.929±0.009 and two-photon interference visibilities of consecutively emitted photons of 0.939±0.009.
[1] S. F. C. da Silva, et al., Applied Physics Letters, 119,12 (2021)
[2] Florian Hornung, et al., arXiv:2310.11899 (2023)
Keywords: GaAs-QDs; Waveguides