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HL: Fachverband Halbleiterphysik
HL 48: Quantum Dots and Wires: Growth
HL 48.7: Vortrag
Donnerstag, 21. März 2024, 16:30–16:45, EW 202
Dynamics of hot carriers in core-shell InGaAs/InAlAs nanowires — •Nabi Isaev1, Hamidreza Esmaielpour1, Jayesh Solomon Dayal1, Imam Makhfudz2, Markus Döblinger3, Jonathan J. Finley1, and Gregor Koblmüller1 — 1Walter Schottky Institut, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching, Germany. — 2IM2NP, UMR CNRS 7334, Aix-Marseille Université, Marseille 13013, France. — 3Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, 81377, Germany.
The study of hot carrier dynamics in nanowires is of significant importance for advanced concept photovoltaic solar cells, such as hot carrier solar cells, which aim to improve the efficiency of this technology beyond the upper theoretical limit for single junction devices. The one-dimensional geometry of nanowires can improve the effects of hot carriers by confining them spatially, and increase photo-absorption by increasing internal reflection. Here we present our results on hot carrier dynamics in core-shell InGaAs/InAlAs nanowires grown by molecular beam epitaxy using a catalyst-free growth method. Micro-photoluminescence spectroscopy has shown evidence of hot carrier effects in these nanowires. Furthermore, strong structural and dimensional dependencies in hot carrier properties were observed for these nanowires with diameters ranging from 110 nm to 200 nm. The origin of this effect is attributed to the influence of phonon bottleneck effects, Auger recombination and structural properties of the nanowires on hot carriers.
Keywords: Nanowires; Hot carriers; Thermalization mechanism; Auger recombination; Photoluminescence