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HL: Fachverband Halbleiterphysik
HL 49: Semiconductor Lasers II
HL 49.1: Hauptvortrag
Donnerstag, 21. März 2024, 15:00–15:30, EW 561
Dynamical laser properties of tunnel-injection devices. — •Michael Lorke1, Frank Jahnke1, Gadi Eisenstein2, and Johann-Peter Reithmeier3 — 1Institute for Theoretical Physics, University of Bremen, Germany — 2Electrical Engineering Department and Russel Berrie Nanotechnology Institute, Technion, Haifa, Israel — 3Technische Physik, Institute of Nanostructure Technologies and Analytics, Kassel
Tunnel injection lasers are an appealing concept for the next generation of semiconductor lasers, as they promise improved modulation rates and better temperature stability. Moreover, they eliminate a major detrimental effect of quantum dot lasers, which is the gain nonlinearity caused by hot carriers. The introduction of a tunnel barrier for controlling the coupling of quantum dots (QDs) to an injector quantum well (QW) introduces significant design changes in comparison to conventional QD or QW lasers. As a result, nanoscale physics and quantum mechanical interaction processes take a more important role in the device properties. This poses new challenges to our theoretical understanding and increases the need for applying microscopic models. We present a theoretical study of dynamical laser properties inclusing the transport within the device and show the impact of alignment between the injector quantum well and the QDs on the laser switch-on process and modulation properties. These are important for the use of these laser systems in novel telecommunication applications.
Keywords: Quantum Dot; QD laser; Telecommunication; Laser dynamics