Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 49: Semiconductor Lasers II
HL 49.2: Vortrag
Donnerstag, 21. März 2024, 15:30–15:45, EW 561
High-speed low-noise wafer-fused MBE-grown 1550 nm VCSELs — •Sicong Tian1,2, Georgiy Sapunov1, Sergei Blokhin3, Andrey Babichev4, Innokenty Novikov4, Anton Egorov5, Leonid Karachinsky4, and Dieter Bimberg1,2 — 1Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, PR China — 2Center of Nanophotonics, Institute of Solid State Physics, Technische Universität Berlin, Berlin D-10632, Federal Republic of Germany — 3Saint Petersburg, Russia — 4Saint Petersburg, Russia — 5Saint Petersburg, Russia
High-power low-noise wafer-fused MBE-grown 1550 nm VCSELs with an InP-based optical cavity with InGaAs QWs and a composite InAlGaAs 6 μm BTJ and AlGaAs/GaAs distributed Bragg reflectors are fabricated. The VCSELs demonstrate 5 mW single-mode continuous-wave output optical power at 20 °C and 1 mW at 70 °C. Over 13 GHz 3dB modulation bandwidth is obtained at 20 °C. NRZ data rate of 37 Gbps under BTB condition is shown. A preliminary study shows RIN < -156 dB/Hz and a data rate > 50 Gbit/s at a 500 m distance under PAM4 modulation.
Keywords: Vertical-Cavity Surface-Emitting Lasers; wafer fused; high speed; single mode; low noise