Berlin 2024 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 49: Semiconductor Lasers II

HL 49.4: Talk

Thursday, March 21, 2024, 16:00–16:15, EW 561

Radially doped InGaAs-GaAs(Sb)/AlGaAs multi-quantum well nanowire laser structures on silicon — •Sebastian Werner, Tobias Schreitmüller, Hyowon Jeong, Paul Schmiedeke, Jonathan Finley, and Gregor Koblmüller — Walter Schottky Institute, Technical University of Munich, 85748 Garching, Germany

The ability to integrate III-V semiconductor nanowires (NW) on silicon (Si) platform opens many perspectives for advanced optoelectronic and photonic device applications on-chip. However, for energy-efficient device performance, as in III-V NW-solar cells, light emitting diodes (LEDs) or laser diodes, the design of accurately doped heterostructures and the optically active region is very crucial. In this contribution, we present our developments of radially doped n-i-p core-multishell NW hetero-structures monolithically integrated on the n-Si (111) platform for compact NW laser diode devices in the near-infrared spectral range. The NW structure is designed to host n-type doped GaAs(Sb) cores, while the shell is composed of (In,Al)GaAs(Sb)-based heterojunctions that define intrinsic multi-quantum well (MQW) active and p-type doped regions. Under optical pumping schemes, we show that n-doped (Si-doped) GaAs(Sb) NWs show lasing characteristics, with a doping dependent lasing threshold < 50 µJ/cm². Extending these experiments to fully doped radial heterojunctions hosting seven coaxial InGaAs/GaAs MQWs, we further demonstrate low-threshold lasing of < 43 µJ/cm² (10K) and even up to ∼150K in an integrated vertical-cavity geometry on Si.

Keywords: Nanowire; III-V materials; Doped