HL 49: Semiconductor Lasers II
Donnerstag, 21. März 2024, 15:00–16:45, EW 561
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15:00 |
HL 49.1 |
Hauptvortrag:
Dynamical laser properties of tunnel-injection devices. — •Michael Lorke, Frank Jahnke, Gadi Eisenstein, and Johann-Peter Reithmeier
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15:30 |
HL 49.2 |
High-speed low-noise wafer-fused MBE-grown 1550 nm VCSELs — •Sicong Tian, Georgiy Sapunov, Sergei Blokhin, Andrey Babichev, Innokenty Novikov, Anton Egorov, Leonid Karachinsky, and Dieter Bimberg
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15:45 |
HL 49.3 |
High-beta quantum dot micropillar lasers operating at room temperature — •Sarthak Tripathi, Floriana Laudani, Kartik Gaur, Imad Limame, Ching-Wen Shih, Sven Rodt, and Stephan Reitzenstein
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16:00 |
HL 49.4 |
Radially doped InGaAs-GaAs(Sb)/AlGaAs multi-quantum well nanowire laser structures on silicon — •Sebastian Werner, Tobias Schreitmüller, Hyowon Jeong, Paul Schmiedeke, Jonathan Finley, and Gregor Koblmüller
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16:15 |
HL 49.5 |
Numerical investigation of the far-field behavior of VCSELs with monolithic high contrast gratings — •Lilli Kuen, Mikołaj Janczak, Marcin Gebski, Tomasz Czyszanowski, Sven Burger, Stephan Reitzenstein, and Martin Hammerschmidt
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16:30 |
HL 49.6 |
Gain characteristics of AlGaN quantum wells for UVC laser diodes application — •Giulia Cardinali, Alexander Schulz, Sebastian Kölle, Friedhard Römer, Bernd Witzigmann, Norman Susilo, Daniel Hauer Vidal, Martin Guttmann, Tim Wernicke, and Michael Kneissl
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