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HL: Fachverband Halbleiterphysik

HL 5: Optical Properties I

HL 5.8: Vortrag

Montag, 18. März 2024, 11:30–11:45, EW 561

UV defect emitters in hexagonal boron nitride — •Nils Bernhardt¹, Luca Choi¹, Benjamin M. Janzen¹, Felix Nippert¹, Angus Gale², Igor Aharonovich², Milos Toth², and Markus R. Wagner^{3, 1} — ¹Technische Universität Berlin, Insitute of Solid State Physics, Berlin, Germany — ²University of Technology Sydney, Sydeny, Australia — ³Paul Drude Institute for Solid State Electronics, Berlin, Germany

Room temperature defect quantum emitters in hexagonal boron nitride have emerged as a source of considerable scientific interest. Recent studies have demonstrated the ability to engineer reliable single photon sources in thin film hBN with reproducible emission properties in all spectral ranges, suitable for applications such as quantum communications. While extensive studies of such emitters in hBN have been conducted in the visible and near-IR spectral range, this work aims to investigate the recently observed UV luminescence of hBN point defects at 4.1eV, likely caused by carbon substitutions at nitrogen sites.

A frequency-quadrupled titanium-sapphire laser at 200 nm is used for pulsed above-bandgap excitation and compared to sub-bandgap pulsed and continuous wave excitation. A direct dependence between the luminescence of the defect and its surroundings is explored to establish a link between the properties of the 2D material samples and the electron-phonon coupling. These results are corroborated by the correlation of AFM, micro-Raman, and micro-PL mapping measurements.

Keywords: hexagonal boron nitride; ultraviolet; defects; quantum emitters; electron-phonon coupling