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HL: Fachverband Halbleiterphysik
HL 51: Functional Semiconductors for Renewable Energy Solutions II
HL 51.1: Talk
Friday, March 22, 2024, 09:30–09:45, ER 325
Investigation of a LID defect energy barrier using a P-line appearing in indium-doped silicon PL spectra — •Katharina Peh1, Dominik Bratek1, Kevin Lauer1, 2, Robin Lars Benedikt Müller1, Dirk Schulze1, Aaron Flöttotto1 und Stefan Krischok1 — 1TU Ilmenau, Institut für Physik und Institut für Mikro- und Nanotechnologien, 98693 Ilmenau, Germany — 2CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
With the help of low-temperature photoluminescence (LTPL) it is possible to find photoluminescence (PL) lines that originate from defects. These PL lines can indicate not only the species, but also the density of one specific defect configuration. In indium-doped silicon, the P-line at 1.118 eV is used to investigate light-induced degradation (LID). 1,2 With illumination and annealing treatments, we are now able to reproducibly influence the intensity of the P-line, and thus identify the P-line as an intermediate state. It will be discussed within the ASi-Sii defect model. 3 Both Czochralski (CZ) and float zone (FZ) silicon wafers were examined and their behaviour compared. For the first energy barrier in annealing treatments of the LID defect, we obtain values between EFZ=0.5± 0.09 to ECZ=0.84±0.22 eV. 4 [1] K. Lauer, C. Möller, D. Schulze, and C. Ahrens, AIP Advances 5(1), 017101 (2015). [2]C. Möller, and K. Lauer, Physica Status Solidi (RRL) - Rapid Research Letters 7(7), 461-464 (2013). [3]K. Lauer, K. Peh, D. Schulze, T. Ortlepp, E. Runge, and S. Krischok, Physica Status Solidi (a) 219(19), 2200099 (2022). [4]D. Bratek, Master thesis (2023).
Keywords: Low temperature photoluminescence; Indium doped silicon; P-line; Defect model of light induced degradation (LID); Energy barrier