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HL: Fachverband Halbleiterphysik

HL 51: Functional Semiconductors for Renewable Energy Solutions II

HL 51.3: Talk

Friday, March 22, 2024, 10:00–10:15, ER 325

Luminescence study of light induced degradation in thallium implanted silicon — •Robin Lars Benedikt Müller¹, Kevin Lauer^{1, 2}, Katharina Peh¹, Zia Ul-Islam¹, Dirk Schulze¹, and Stefan Krischok¹ — ¹Technische Universität Ilmenau, Institut für Physik und Institut für Mikro- und Nanotechnologien, 98693 Ilmenau, Germany — ²CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany

Light-induced degradation (LID) designates the loss of efficiency of doped silicon-based devices such as solar cells and detectors. Despite extensive research into this phenomenon in recent decades, the recombination-active defect responsible for degradation remains unidentified until today. Thereby a variety of dopants were examined, besides boron and copper, indium doped silicon was investigated. A potential explanation for LID in Si:In is the so-called ASi-Sii defect, whose possible defect configurations manifests itself by the appearance of the P-line in the spectrum of low-temperature photoluminescence (LTPL)[1]. Besides this P-line, the spectra of thallium-doped silicon reveal a so-called A-line, whereby this unusual luminescence system is based on a defect which is present in two different configurations[2]. After the first demonstration of LID in Si:Tl, we investigated differently doped samples with regard to the behaviour of these spectral elements under the influence of the LID cycle.[1] K.Lauer, C.Moeller, D.Schulze, and C. Ahrens. AIP Advances, 5(1):017101, 01 2015; [2] H. Conzelmann, A. Hangleiter, and J. Weber. physica status solidi (b), 133(2):655*668, 1986.

Keywords: light induced degradation; low temperature photoluminescence; thallium doped silicon