Berlin 2024 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 51: Functional Semiconductors for Renewable Energy Solutions II
HL 51.4: Talk
Friday, March 22, 2024, 10:15–10:30, ER 325
Water interaction with AlInP(100) surface in dependence of its surface reconstruction — •Mohammad Amin Zare Pour1, Sahar Shekarabi1, Isaac Azahel Ruiz Alvarado2, Agnieszka Paszuk1, Wolfram Jaegermann3, Wolf Gero Schmidt2, and Thomas Hannappel1 — 1Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau — 2Lehrstuhl für Theoretische Materialphysik, Universität Paderborn — 3Surface Science Laboratory, Department of Materials and Earth Sciences, Technische Universität Darmstadt
AlInP(100) is utilized for selective electron transport in the window layer of III-V multijunction solar cells. Understanding its interaction with water is crucial for photoelectrochemical applications and ALD process. In this study, we investigate reaction mechanisms of water with atomically well-ordered n-AlInP(100) surfaces using X-ray photoelectron spectroscopy (XPS) and in situ reflection anisotropy spectroscopy . Either phosphorous- or indium-terminated (P-rich or In-rich) AlInP(100) layers were prepared by metalorganic chemical vapor deposition and were exposed to water at room temperature at 10-5 mbar While the P-rich surface does not exhibit significant changes in the chemical and electronic structure due to stable P-P bonds, the In-rich surface exhibits significant changes already after a short exposure to water. The XPS results show that the In-In bonds on In- terminated surfaces are the active sites, while neither the P-P bonds nor the III-P bonds on P-terminated surfaces interact with water.
Keywords: AlInP; Photoelectrochemistry; III-V semiconductors; X-ray photoelectron spectroscop; in-situ reflection anisotropy spectroscopy