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09:30 |
HL 52.1 |
Heterostructure optimization of far-ultraviolet C light emitting diodes for improved efficiency and lifetime — •Tim Kolbe, Sylvia Hagedorn, Jens Rass, Hyun Kyong Cho, Jan Ruschel, Sven Einfeldt, and Markus Weyers
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09:45 |
HL 52.2 |
Hole transport in AlGaN-based far-UVC LEDs with multiple quantum wells — •Franz Biebler, Marcel Schilling, Jakob Höpfner, Massimo Grigoletto, Tim Wernicke, and Michael Kneissl
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10:00 |
HL 52.3 |
Impact of overgrowth conditions on characteristics of tunnel-junction LEDs — •Christoph Berger, Armin Dadgar, and André Strittmatter
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10:15 |
HL 52.4 |
The contribution has been withdrawn.
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10:30 |
HL 52.5 |
Heterostructure design of 233 nm far-UVC LEDs with varied DPD layer thickness — •Paula Vierck, Jakob Höfpner, Marcel Schilling, Massimo Grigoletto, Tim Wernicke, and Michael Kneissl
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10:45 |
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15 min. break
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11:00 |
HL 52.6 |
Optically pumped UVC VCSELs — •Estrella Torres Vasquez, Joachim Ciers, Nelson Rebelo, Filip Hjort, Michael Bergmann, Sarina Graupeter, Giulia Cardinali, Johannes Enslin, Tim Wernicke, Michael Kneissl, and Åsa Haglund
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11:15 |
HL 52.7 |
Temperature dependent electroluminescence studies of the influence of the electron blocking layer thickness on the emission characteristics of deep ultraviolet light emitting diodes — •Jakob Höpfner, Fabio Steyer, Marcel Schilling, Anton Muhin, Tim Wernicke, and Michael Kneissl
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11:30 |
HL 52.8 |
Facet degradation mechanisms of InGaN-based laser diodes emitting around 420 nm — •Erik Freier, Jos Boschker, Johannes Glaab, Anna Mogilatenko, Carsten Netzel, Martin Guttmann, Ji Hye Kang, Saad Makhladi, and Sven Einfeldt
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11:45 |
HL 52.9 |
Influence of the MQW heterostructure variations on the efficiency of AlGaN-based DUV LEDs — •Markus A. Blonski, Anton Muhin, Tim Kolbe, Sylvia Hagedorn, Hyun Kyong Cho, Jens Rass, Tim Wernicke, and Michael Kneissl
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