Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 55: Perovskite and Photovoltaics III (joint session HL/KFM)

HL 55.4: Vortrag

Freitag, 22. März 2024, 10:15–10:30, EW 203

Understanding and mitigating atomic oxygen-induced degradation of Perovskite solar cells for near-earth space applications — •Biruk Seid — Institute of Physics and Astronomy, University of Potsdam, D-14476 Potsdam-Golm, Germany

Atomic oxygen (AtOx) in low-Earth orbit is known to etch, corrode, and form metal oxide on the metal contact with PSC devices. To mitigate this issue, we report the applicability of thermally evaporated 0.7*m silicon oxide (SiOx) encapsulation as an AtOx barrier for triple-cation PSC. Moreover, the AtOx-induced degradation mechanism of phenethylammonium iodide (PEAI)-passivated and non-passivated devices are discussed and analyzed. We found that after a total exposure duration of 120 minutes, the SiOx-encapsulated cells maintained over 97% of their initial power conversion efficiency (PCE), regardless of the device type (passivated or non-passivated). In contrast, in the case of unencapsulated devices, PCEs for non-passivated and PEAI-passivated devices the PCE declined to a maximum value of 43% and 62%, respectively. In non-passivated and unencapsulated devices, AtOx has no impact on the short-circuit current density (JSC) but degrades the fill factor (FF) and open circuit voltage (VOC). In PEAI-passivated devices, the JSC additionally degrades by almost 35%. perovskite was not the origin of PCE degradation. Instead, inefficient charge extraction and mobile ions, due to a swiftly degrading PEAI interlayer are the primary causes of AtOx-induced device performance degradation in passivated devices, whereas a large ionic FF loss limits non-passivated devices with no change in transit time.

Keywords: Space PV; Low earth orbit; Atomic oxygen; Encapsulation; Degradation