Berlin 2024 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 56: Heterostructures, Interfaces and Surfaces II

HL 56.5: Vortrag

Freitag, 22. März 2024, 10:30–10:45, EW 561

InGaN/GaN nanowires as optical biosensors with dual readout — •Genrietta Steingelb, Hannah Nell, Rudolfo Hötzel, Stephan Figge und Martin Eickhoff — Universität, Bremen, Deutschland

Due to their specific electrochemical properties, group III-nitrides (III-N) and their nanostructures have been shown to provide an excellent material platform for the application in electrochemical and biochemical sensors [1-4]. Here, we demonstrate that simultaneous dual readout of InGaN/GaN NW arrays by photoluminescence and photocurrent at different bias voltages provides optical biosensors with enhanced selectivity. As examples we demonstrate the detection of pH changes and of the presence of ascorbic acid and discuss the main detection mechanisms of InGaN NWs on GaN NW templates as well as of axial InGaN/GaN NW heterostructures.

[1] G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann and M. Eickhoff, Appl. Phys. Lett. 83, 177 (2003).

[2] F. Ren, S. J. Pearton, Phys. Stat. Sol. (C) 9, 393 (2012).

[3] J. Wallys, J. Teubert, F. Furtmayr, D. M. Hofmann, M. Eickhoff, Nano Lett. 12, 6180 (2012).

[4] M. Riedel, S. Hölzel, P. Hille, J. Schörmann, M. Eickhoff, F. Lisdat, Biosens Bioelectron. 94, 298 (2017).

Keywords: InGaN/GaN heterostructures; Nanowires; Group III-nitrides; Surface Band Bending; Biosensor