Berlin 2024 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 7: Transport properties I
HL 7.3: Vortrag
Montag, 18. März 2024, 15:30–15:45, ER 325
Ti2MnAl and its modifications, as possible Spin-Gapless-Semiconductor materials. — •Jerzy Goraus, Wojciech Gumulak, and Jacek Czerniewski — Institute of Physics, Faculty of Science and Technology , University of Silesia, 41-500 Chorzów, 75 Pułku Piechoty 1A, Poland
Ti2MnAl was earlier predicted to exhibit Spin-Gapless-Semiconductor (SGS) properties. SGS materials are very interesting due to their potential applications in spintronics. Only in one variant of crystal structure, Ti2MnAl can have such properties; this variant (as we and other researchers have already shown) is not realized in nature. There were, however, papers claiming that element substitution of Ti2MnAl could stabilize inverse Heusler structure for which SGS state is possible. In that presentation, we report our results for studies of Ti2MnAl where Al was substituted by In or Sn, as well as for the isoelectronic Ti2Fe0.5Cr0.5Al compound. We show the results of our experimental measurements - polycrystalline samples characterized with XRD technique, with their resistivity and magnetic properties measurements as well as DFT calculations of the stability of the particular unit cell. We will also show these results in the context of our earlier research of similar materials involving sample surface measurements such as XPS and XAS measurements. The latter, as shown in our earlier report for Ti2CrAl can also resolve the unit cell structure, which is difficult for these materials by the XRD technique alone.
Keywords: spin gapless; semiconductors; magnetism; DFT calculations; electronic structure